2008. 3. 11 1/3 semiconductor technical data ktd1624 epitaxial planar npn transistor revision no : 5 voltage regulators, relay drivers lamp drivers, electrical equipment features adoption of mbit processes. low collector-to-emitter saturation voltage. fast switching speed. large current capacity and wide aso. complementary to ktb1124. maximum rating (ta=25 ) electrical characteristics (ta=25 ) note : h fe (1) classification a:100 200, b:140 280, c:200 400 characteristic symbol rating unit collector-base voltage v cbo 60 v vollector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6 v collector current i c 3 a collector current(pulse) i cp 6 a base current i b 600 ma collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =40v, i e =0 - - 1 emitter cut-off current i ebo v eb =4v, i c =0 - - 1 dc current gain h fe (1) (note) v ce =2v, i c =100 100 - 400 h fe (2) v ce =2v, i c =3a 35 - - collector-emitter saturation voltage v ce(sat) i c =2a, i b =100 - 0.19 0.5 v base-emitter saturation voltage v be(sat) i c =2a, i b =100 - 0.94 1.2 v transition frequency f t v ce =10v, i c =50 - 150 - collector output capacitance c ob v cb =10v, f=1 , i e =0 - 25 - switching time turn-on time t on - 70 - ns storage time t stg - 650 - fall time t f - 35 - * : package mounted on ceramic substrate(250mm 2 0.8t)
2008. 3. 11 2/3 ktd1624 revision no : 5
2008. 3. 11 3/3 ktd1624 revision no : 5
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